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| savantic semiconductor product specification silicon pnp power transistors 2SB1274 d escription with to-220f package complement to type 2sd1913 high reliability. high breakdown voltage low saturation voltage. wide area of safe operation applications 60v/3a low-frequency power amplifier general power amplifier applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -6 v i c collector current -3 a i cm collector current-peak -8 a t c =25 20 p c collector dissipation 2 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1274 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =-1ma; i e =0 -60 v v (br)ceo collector-emitter breakdown voltage i c =-5ma; r be = ? -60 v v (br)ebo base-emitter breakdown voltage i e =-1ma; i c =0 -6 v v cesat collector-emitter saturation voltage i c =-2a ; i b =-0.2a -0.4 -1.0 v v be base-emitter voltage i c =-0.5a ; v ce =-5v -0.8 -1.0 v i cbo collector cut-off current v cb =-40v;i e =0 -0.1 ma i ebo emitter cut-off current v eb =-4v;i c =0 -0.1 ma h fe-1 dc current gain i c =-0.5a ; v ce =-5v 70 280 h fe-2 dc current gain i c =-3a ; v ce =-5v 20 f t transition frequency i c =-0.5a ; v ce =-5v 100 mhz c ob output capacitance i e =0; v cb =-10v;f=1mhz 60 pf h fe-1 classifications q r s 70-140 100-200 140-280 savantic semiconductor product specification 3 silicon pnp power transistors 2SB1274 package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon pnp power transistors 2SB1274 |
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